- APID
- 7243
- ORCID
- 0000-0001-7956-0489
- Google Scholar
- https://scholar.google.com/citations?user=lsJprbIAAAAJ&hl=en&oi=ao
- Location
- POCATELO, IDAHO, United States
- Expertise
- SEMICONDUCTOR DEVICES
- Areas of interest
- semiconductor device physics, Analog and Mixed-Signal and IC Design and Verification
- Member since
- July 2024
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- Effect of Enhanced Hole Transport on the Performance of Ni/Y2O3/n-4H-SiC Epilayer Radiation Detectors
- Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO2/epi-4H-SiC MOS capacitors
- Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection
- Enhancement of radiation detection performance with reduction of EH6/7 deep levels in n-type 4H–SiC through thermal oxidation
- High-resolution radiation detection using Ni/SiO2/n-4H-SiC vertical metal-oxide-semiconductor capacitor
- Performance-Improved Vertical Ni/SiO₂/4H-SiC Metal–Oxide–Semiconductor Capacitors for High-Resolution Radiation Detection